A 3-3.8 GHz Class-J GaN HEMT Power Amplifier

This paper presents a wideband class J power amplifier (PA) based on a packaged 10 W GaN HEMT device covering the 3 GHz to 3.8 GHz frequency range. A good trade-off between efficiency and gain has been pursued in synthesizing the second harmonic output termination. The achieved output power is in excess of 41 dBm with drain efficiency ranging from 59 % to 65.5 % and a small signal gain above 14 dB. Preliminary large signal measurements at 3.3 GHz confirm the proper behavior of the PA.