A Study on Equivalent Circuit Modeling of Wiring Inductance in SiC Power Module for Predicting Conducted EMI of Power Converter

Silicon Carbide (SiC) power semiconductor devices achieve low switching losses with fast switching operation and miniaturized power conversion circuit. SiC power module for high voltage and large current is subject to large di/dt and dv/dt in switching transient. Large di/dt induces surge voltage and ringing oscillation by interacting with circuit parasitic inductance and capacitance. These are fatal factors for electromagnetic interference (EMI) of the circuit. This report studies modeling of parasitic inductance in SiC power module based on three-dimensional (3-D) electromagnetic analysis to realize low EMI design for power conversion circuit. The developed Partial Equivalent Element Circuit (PEEC) model of SiC power module is applied to circuit analysis. The simulated time response of voltage/current in switching operation and frequency spectrum of the conducted EMI for the tested converter agree with the measurement result well.