An oxygen ion dose dependence of dielectric constant and surface roughness of titanium oxide films deposited on silicon by an ion beam assisted deposition technique

Titanium oxide, TiO/sub x/, films with high dielectric constants were deposited on Si surfaces by an ion beam assisted deposition technique. The dielectric constants of the TiO/sub x/ films became higher with decreasing the fraction of oxygen ions during the deposition and with increasing substrate temperature, while the surface morphologies of the TiO/sub x/ films became rougher. The dielectric constants and the surface roughness depended on the fraction of Ti-O bonds in the TiO/sub x/ films.