A plasma immersion ion implantation system for SOI wafer fabrication

Plasma immersion ion implantation (PIII) offers certain enabling advantages in several areas over a conventional beamline ion implanter: implant time independent of substrate size, lower costs, and higher dose rate. Silicon Genesis' novel Protonic Mode/sup TM/ technology achieves ion density exceeding 10/sup 12/ cm/sup -3/, H/sup +//H/sub 2//sup +/ ion mass purity ratio at greater than 100:1, and is cluster-tool compatible. At /spl les/5 kV implant potentials, SiGen's PIII achieves average currents in excess of 150 mA, with an estimated hydrogen ion current of >50 mA.