Model of Probe Transition Including Probe Mispositioning

As the frequency of mm-wave and sub-mm-wave applications frequency is rising, it is important to find easier methods for characterizing uncertainty in on-wafer measurements. In this study, we are exploring the possibility of extracting the probe pads propagation characteristics from several probe touchdowns. By forcing the probe mispositioning at one port, it is possible to capture the changes of measured S-parameters of any two-port device with relatively high transmission, e.g., Thru, Line, etc. After developing lumped element models of the transition, it may be possible to extract its values thanks to a least square optimization process.