Towards a comprehensive model of electronic stopping in amorphous and crystalline silicon

Published experimental data on ion transmission and range profiles in silicon are used to calibrate a hybrid model of local and nonlocal electronic stopping. The resulting comprehensive model is applicable to both the random and the channeling case in a wide energy range for ions with atomic numbers 3/spl les/Z/sub 1//spl les/33. The random stopping power is compared to the ZBL electronic stopping power. Limitations are briefly discussed.