Ion implantation induced damage in silicon carbide studied by non-Rutherford elastic backscattering

Non-Rutherford elastic scattering is a suitable method to obtain concentrations of low atomic number constituents which are difficult to determine when the scattering cross section is Rutherford type. An enhancement factor of over a hundred for the cross section of /sup 12/C can be reached using the /sup 12/C(/spl alpha/,/spl alpha/)/sup 12/C nuclear resonance at 4260 keV. This resonance was utilized to investigate the ion bombardment induced disorder in the carbon sublattice of 4H-SiC. The disorder was created by implantation of 200 keV and 350 keV Al/sup +/ ions at room temperature.