Distribution of ion implanted dopants in gallium nitride

Wurtzitic gallium nitride (GaN) films were implanted with mainly Mg but also with Si, C, and O ions under different conditions (energy, dose, implantation angle, ion-charge state). The resulting depth distributions were analyzed by secondary ion mass spectroscopy (SIMS). The implantation depth profiles and the damage profiles, investigated by Rutherford backscattering-spectroscopy/channeling, are in good agreement with Monte-Carlo simulations. Mg-implantation in the [0001]-channeling direction of GaN resulted in a doubling of the mean projected range of the ions. In addition, the SIMS-detection limit for the different elements was determined.