Application of indium ion implantation for halo doping: experimental and simulation results for advanced CMOS devices

Properties of indium, relevant to halo implantation, are examined. Compared to conventional ions (B/sup +/ and P/sup +/) heavy ions show lower range profile straggling and reduced dopant diffusion. The channeling behavior of indium ions implanted at high tilt angle is examined as a function of wafer azimuthal orientation angle. Dopant profiles show a very good agreement with calibrated atomistic simulations. In addition, calculations demonstrate that the damage produced by indium doping reduces the channeling of subsequent extension arsenic implant. For an aggressive halo with low energy indium implant, simulated saturation threshold voltage is sensitive to small implant angle variations.