Analysis of Noise-Immune Dopingless Heterojunction Bio-TFET Considering Partial Hybridization Issue

A dielectric modulated (DM) dual-sided dopingless (DL) GaAs
_0.5
Sb
_0.5
/In
_0.53
Ga
_0.47
As hetero-junction (HJ) Tunnel FET (DM-DDL-HTFET) based label-free biosensor architecture having hetero-gate-dielectric (HGD) has been offered. Here, virtual pocket of N
⁺
-category with differing electronic concentration (Ne) has been realized through the adjustment of source-sided-channel length (LSC) below the gate region. Primarily, the optimized structure has been investigated considering energy-band gap, mole fraction of HJ material and gate-to-source spacer thickness (Lgap,S). Next, the efficiency of optimized DDL-HTFET model excluding nano-gap has been juxtaposed with the Si-based TFET contenders. The effect on Ne, surface potential (ψ), drain-current (IDS), and their equivalent sensitivity have been analyzed by the ATLAS device simulator considering the steric hindrance issues. 37.54% and 54% improvement in threshold voltage sensitivity can be obtained for DM-DDL-HTFET over single side DL-SiTFET (DM-SDL-SiTFET) due to variation of oxide layer thickness (Tox) and source-side dielectric material respectively. Moreover, DM-DDL-HTFET offers 58.64% (42.18%) and 44.44% (73.33%) inferior minimum noise figure and noise conductance over DM-SDL-SiTFET at 50 (250) GHz frequency correspondingly after immobilization of APTES biomolecules.