Applying GaN HEMTs in Conventional Housing-Type Power Modules

The direct bonded copper (DBC) based conventional housing-type module is a promising package for high-power GaN HEMT applications, due to its excellent thermal performance, low cost, and the availability and maturity. However, the traditional single-layer current conducting path on the substrate and high-profile housing of this technology limits the reduction of parasitic inductance compromising the switching performance of GaN HEMTs. This paper describes techniques to reduce parasitics when using GaN in conventional housing-type packages. Different approaches minimizing stray inductance of this conventional packaging are evaluated by FEM simulation and experiments. A novel housing design is proposed and prototyped. Reliable and efficient switching transitions are realized without a cost premium.