A Frequency-domain Method for Stray Parameters Extraction in Arbitrary Section of Laminated Busbars

Extraction for non-ideal stray parameters in power electronic systems has received widespread attention. However, the existing researches mostly target on improving the extraction accuracy in a typical region, ignoring the universal extraction method in arbitrary part of circuits. In this paper, a frequency-domain stray parameter extraction method based on oscillation in turn-off transient is presented. It is capable of calculating stray inductance and capacitance in any section of laminated busbar. Firstly, the extraction platform for double pulse test is constructed. During turn-off process of SiC MOSFET, the oscillation frequencies of drain-source voltage are measured by Fourier transform. Then, through solving a set of frequency-based equations derived from equivalent circuit, the stray parameters are experimentally extracted. Finally, based on the testing results in a section of laminated busbar, the feasibility of proposed method is validated.