Chip Metallization Aging Monitoring with Induced Voltage veE between Kelvin and Power Emitter for High Power IGBT Modules

Online aging monitoring provides an effective way to get an insight into the current health state for the high power insulated gate bipolar transistors (IGBTs). With the development of wire-bonding and soldering technologies, chip metallization is also considered a bottleneck and the reconstruction failure mechanism is found to be the inducement to the wire lifting-off and solder degradation. In this paper, the peak voltage across the parasitic inductance between the Kelvin and power emitter in switching transient is proposed as an online chip metallization aging condition indicator. The monotonic dependence between the induced peak voltage and chip metallization aging is investigated and verified by the experimental results from the double-pulse test and accelerated aging test platform. Besides, the high-fitting-degree function of induced voltage peak with aging cycles and junction temperature is given. Hence, the induced peak voltage is validated as a promising chip metallization aging sensitive parameter.