A Square-Bordered Position-Sensitive Silicon Photomultiplier Toward Distortion-Free Performance With High Spatial Resolution

A two-dimensional (2D) square-bordered position-sensitive (PS) silicon photomultiplier (SiPM) toward distortion-free performance with high spatial resolution is reported in this letter. The device, based on SiPM technology of an epitaxial quenching resistor, contains a central cap resistive region enclosed by a narrow square-shaped metal ring contact located at the surface periphery. Four small output metal pads are connected to the metal ring at each corner to read out signal charges. With an active area of 6.14 mm x 6.14 mm, the PS-SiPM demonstrated an average position measurement error (PME) of 86.9 μm without correction, which accounted for 1.4% of the side length of the active area. The average position resolutions were demonstrated to be ~130.7 μm and ~135.6 μm in the X and Y directions, respectively, for incident light with a spot diameter of 80 μm and a mean photoelectron number (MPEN) of ~600. In addition, an intrinsic radioactive-light image of a pixelated 12 × 12 lutetium-yttrium oxyorthosilicate (LYSO) array with each element volume of 0.475 × 0.475 × 6 mm
³
was clearly resolved by the 2D square-bordered PS-SiPM.