Tuning Domain Wall Conductance in Lithium Niobate Thin-Films

Ferroelectric domain wall conductance is a rapidly growing field, apparently for inclined domain walls. In this study we present thin-film lithium niobate as an ideal template, in which the inclination of the domain wall can be tuned and hence, the conductance. The precise tuning of domain wall inclination upon an applied voltage is hereby interesting for the application into non-volatile memories, which store more than a binary information. In this study, we present the creation and erase of such conductive domain walls. We obtain very stable resistance switching voltages given by the ferroelectric nature of the device as well as a very large increase in the conduction. The observed DW conductance tunability by the applied voltage can be correlated with phase-field simulation of the DW inclination evolution upon poling.