Influence of Temperature on Analog/Radio Frequency Appearances of Heterojunction Cylindrical Gate Tunnel FETs

Based on 3-D numerical simulation, we have presented the influence of temperature on the analog (such as drain current (I
_d
), transconductance (g
_m
), subthreshold swing (SS), I
_ON
/I
_OFF
ratio, transconductance generation factor (TGF), and gate leakage (Ig) ) and radio frequency parameter (such as gate capacitance (C
_gg
), cut-off frequency(f
_t
), and gain-bandwidth product (GBW) of heterojunction (HJ) cylindrical gate (CG) tunnel field-effect transistors (TFETs). From the simulation results, it is observed that almost no change in ON-state current (ION) while OFF-state current (I
_OFF
) changed rapidly for the whole range of temperature (250K to 450K). Further, rapid change is observed in the Cgg, ft, and GBW at a larger gate voltage while almost constant at smaller gate voltage (V
_GS
<; 0.5V).