New technique for fast characterization of SILC distribution in flash arrays

A new method for characterizing the SILC in flash memories is presented. The role of the SILC distribution in determining the failure statistics of flash cell arrays is first pointed out. The new technique is then explained, and results from a test array are shown. The description in terms of a simplified formula for the leakage current provides evidence for the bimodal distribution of the SILC distribution in the memory array under test. The bimodal character of the SILC distribution is finally verified by directly comparing characteristics measured on real cells with results of the new method on the same memory chip.