High-precision analog EEPROM with real-time write monitoring

We have developed a non-volatile high-precision analog EEPROM comprising two transistors per cell. In this newly developed memory, real-time write monitoring (RTM) is employed during cell programming to achieve automatic write termination without conventional write-verify cycles. Highly accurate data writing has been realized using a new self-calibrated offset cancellation scheme involving the double auto-zeroing of a chopper comparator. Fundamental circuit operation is verified experimentally on fabricated test circuits. Without the need for time-consuming write-verify cycles, the new analog EEPROM is suitable for use in analog signal processing applications with real-time information processing requirements.