Goos–Hänchen and Imbert–Fedorov Shifts in the Guided Mode of the Silicon-on-Insulator Waveguide

Goos-Hänchen (GH) and Imbert-Fedorov (IF) shifts have played an important role in the beam reflection or refraction operations of optical systems. In this article, we performed the self-consistent modeling and the MATLAB simulations for the GH and IF shifts in the guided mode of the silicon-on-insulator (SOI) waveguide, and obtained the excellent simulation results for the corner material of Neff (Si
₃
N
₄
) = 2.0, the guided-mode of N
_eff
(E
_x
) = 2.9, N
_eff
(E
_y
) = 2.9, and the incident angles of θ
_c
(te) = 43.6028
^°
and θ
_c
(tm) = 43.6028
^°
. The simulation results obtained with both the theoretical model and the software tool FDTD have validated the IF displacement effect in waveguide mode, which will deteriorate the performance of optical switch.