Laser Simulation of Transient Ionizing Radiation Effects in the 0.18μm CMOS Inverter Chain

In this paper, pulsed laser is used to simulate the transient ionizing radiation effects in a 0.18μm CMOS inverter chain. The results of experiment and TCAD simulation show the voltage and current perturbations at output 0 are always greater than that at output 1 within a certain dose rate range. The comprehensive analyses demonstrate the parasitic bipolar effect in PMOS is more serious than that in NMOS under transient ionizing radiation, which means photocurrent especially secondary photocurrent is the essential cause why voltage disturbance at output 0 is greater than that at output 1.