Total Dose Radiation Response of Substrate Hot Carrier for Uniaxial Strained Si Nano-Scale NMOSFET

An analytical model of substrate hot carrier of the uniaxial strained Si Nano-scale NMOSFET has been developed due to total dose irradiation effect. The influence of total dose, geometry parameter on hot carrier substrate current was simulated by Sentaurus-TCAD. Thus, the proposed model provides good reference for research on irradiation reliability and application of strained integrated circuit of uniaxial strained Si Nano-scale NMOSFET.