Resistive Failure Localization of Electronic Components by Lock-in Thermography

Non-destructive failure analysis and defect characterization are necessary steps for electronics components. Infrared thermography is a non-invasive, contactless technology providing information regarding defect localization as well as thermal characterization. Lock-in thermography (LIT) is introduced to improve the detection sensitivity, make it a useful tool in fault localization than conventional thermal measurement. The principle of LIT will be discussed, then case study of integrated circuit, multilayered ceramic capacitor and discrete device will be present. The results demonstrated LIT was effective from passive device fault isolation to die level fault isolation, especially in low resistance failure.