Design and Fabrication of IPD Low-Pass Filter on Silicon Substrate

IPD (Integrated Passive Device) is an important implementation method of SiP(System in Package),which uses more flexible materials and processes to reduce the influence of stray inductance and capacitance that can improve the performance of passive components. This paper provides an analysis of IPD filters. A high resistance silicon based IPD process containing electroplating, dry etching, PECVD, CMP is introduced. Based on the structure given in the process, three kinds of LC low-pass filters are designed and fabricated with silicon based IPD fabrication technology in NCAP. The electrical properties of the filter samples are tested by VNA(Vector Network Analyzer) with a pair of GS probes. The in-band insertion losses of the filters are less than 0.86dB and the in-band return losses are larger than 10.4dB that meet the design targets.