Research on microstructures of high-power LED chip based on rapid thermal impact

GaN based LED epitaxial layer was prepared on sapphire substrate by MOCVD. The effects of different oxygen volume flow rates on ITO film properties and LED chip photoelectric properties were studied when the annealing temperature was 550°C and annealing time was 200s. The results showed that no oxygen, square resistance and transmittance of ITO thin films were 33 Ω/m
²
and 93.1% LED chips in current crowding effect, its electro-optic conversion efficiency is only 33.3%; Oxygen volume flow is 1 cubic cm/min, the square resistance and transmittance of ITO thin films were Ω/m
²
and 70 95.9%, LED chip, current poor extension, the forward voltage is higher, electro-optic conversion efficiency is 43.8%; Oxygen volume flow of 0. 4 cubic cm/min, the square resistance and transmittance of ITO thin films were 58 Ω/m
²
and 95.4% current extend the best LED chips, its brightness the highest and lowest forward voltage, electro-optic conversion efficiency is higher, at 52.9%.