Electrical properties of TiO TiOx bilayer prepared by atomic layer deposition at different temperatures

The conversion efficiency of crystalline silicon heterojunction solar cells is increased by carrier selective contacts (CSCs) thanks to the combination of conductive and passivating layers. In this work, we propose the titanium oxide (TiO TiO
_x
) bilayer to consist of TiO TiO
_x
layerlayers prepared at 100 and 150°C by atomic layer deposition ALD). The TiO TiO
_x
bi layer shows higher electrical properties in comparison with a single TiO TiO
_x
layer. The enhanced electrical properties are origin ated from high passivation performance and low contact resist resistivity of TiO TiO
_x
layerlayers prepared at 150 and 100 °C, respectively respectively, suggesting modulation of the deposition temperature can improve the functionality of ALD ALD-materials.