Controlling the Effective Channel Thickness of Junctionless Transistors by Substrate Bias

Substrate-bias-affected unique electrical characteristics of junctionless transistors (JLTs) were investigated in detail. Bulk channel thickness of JLTs (t
_{si_eff}
) was effectively modulated by back-gate bias (V
_gb
). The variation in threshold voltage (V
_th
) and mobility degradation were observed in the reduced t
_{si_eff}
, due to the negative V
_gb
-induced depletion of free electrons. The V
_gb
effect was also influenced significantly by the doping concentration in JLTs. In addition, numerical simulations verified those results and analytical equations explained well the experimental results.