Performance Comparison of State-of-the-Art 300A/1700V Si IGBT and SiC MOSFET Power Modules

Recently, Mitsubishi Electric began the rollout of second generation silicon carbide (SiC) technology in 1200 V and 1700 V class power modules. These new modules, shown in Figure 1, provide greater efficiency and higher power density than previous SiC generations as well as the latest silicon (Si) technology, which enables new capabilities in energy, transportation, and medical applications.