High-current Y-Ba-Cu-O coated conductor using metal organic chemical-vapor deposition and ion-beam-assisted deposition

YBa/sub 2/Cu/sub 3/O/sub x/ (YBCO) films have been deposited on buffered metal substrates by metal organic chemical-vapor deposition (MOCVD). Nickel alloy substrates with biaxially-textured yttria-stabilized zirconia (YSZ) buffer layers deposited by ion-beam-assisted deposition (IBAD) were used. A liquid-static precursor delivery system was designed, constructed, and used in the MOCVD facility at Intermagnetics for the reported work. At 77 K, under self-field conditions, we achieved a critical current (I/sub c/) of 97.5 A in YBCO film grown by MOCVD on an IBAD substrate. This I/sub c/ corresponds to a critical current density of 1.3 MA/cm/sup 2/ and 130 A/cm width of tape.