New conditioning circuit for FDSOI-ISFET sensor

Ions-Sensitive Field-Effect-Transistor (ISFET) are becoming the platform sensor for various fields such as biomedical and chemical. Despite many advantages like quick response, small size as well as wide measurement range, the efficiency of the output measurement is widely affected by temperature, this require supplementary safety to the extracted data. In this work, we propose with a brief manner a new ISFET model that is based on FDSOI technology and we develop at the end a new integrated interface circuit that can perform great temperature compensation. This operation aims to enhance stability of readout circuit for ISFET.