Design and properties of logic circuits based on memristor devices

In this paper, a logic circuit based on memristor devices is discussed for future digital applications. Its I- V characteristics are compared to a physical memristor to verify the model similarity with a real memristor device. An interface circuit is introduced between the memristor model and the CMOS components. The interfacing circuit is composed of a memristor (the resistance state) and a transistor. This interfacing circuit is very important to incorporate and integrate memristors into CMOS based digital applications. In this context, we examined the model behavior under the configuration of the 1T1R OxRRAM. We performed a circuit-level comparison of the proposed design with other designs proposed in the literature. We validate a non-volatile NAND gate based on 1T1R cell, then we discuss its possible configuration states “00”, “01”, “10”, and “11”. In addition, we implement this 1T1R cell on a crossbar array application and examine its operation. Thus, these memory-based CMOS circuits are potentially beneficial for future large-scale applications.