Metal gate strained silicon MOSFETs for microwave integrated circuits

In this work a III-V MODFET fabrication process has been adapted to fabricate metal gate silicon based MOSFETs. A range of MOSFETs with gate lengths varying from 1 /spl mu/m to 120 nm were fabricated and all showed good transistor action. The gate metal was Ti/Pd/Au 200 nm thick and both pyramidal and T shaped gates were fabricated. The parasitic gate-source capacitance was reduced by using a spin on dielectric. The strained silicon MOSFETs with rectangular 0.3 /spl mu/m Ti/Pd/Au gates had measured f/sub T/ and f/sub max/, of 11 GHz and 12 GHz respectively. By de-embedding the parasitic pad capacitance the intrinsic f/sub T/ and f/sub max/ are 20 GHz and 21 GHz.