Effect of Electrodes on Generation Rate of CdTe and PbSe Based Optoelectronic Devices

In this work, we have modeled the effects of different electrodes over the generation rate of the CdTe and PbSe based devices. The device structure used is ITO/TiO
₂
/CdTe or PbSe/Electrodes, where TiO
₂
forms a heterojunction with CdTe or PbSe. The device is analyzed with different electrodes with different work functions such as Au (5.47 eV), Ni (5.22 eV), Pt (5.64 eV), and Ti (4.33 eV). Under the normalized illumination intensity devices are analyzed and the generation rate is obtained for resonating behavior of the device over the active region (CdTe or PbSe).The effect of electrode variation is mostly dominated over the CdTe based device with a normalized generation rate varying from 0.98 to 0.80 over the same wavelength. Whereas, in PbSe based device the generation rate ranges from 0.99 to 0.92.