A Sub-Nanosecond Level Shifter with Ultra-High dV/dt Immunity Suitable for Wide-Bandgap Applications

To satisfy fast and high dV/dt immunity driver for wide-bandgap power device applications, speed and dV/dt immunity of the conventional level shifter should be improved. In this paper, a sub-nanosecond level shifter has been proposed, which has ultra-high dV/dt immunity without any additional circuit. Using the edge detection technique, the propagation delay of the proposed level shifter has been reduced significantly. The proposed level shifter is established in a 0.5 μm and a 0.18 μm BCD processes, whose results demonstrate a 520ps propagation delay with the 0.5μm process and a 170ps propagation delay with the 0.18μm process are realized, respectively. More than 250V/ns dV/dt immunity is achieved, which only occupies a 0.022mm² active area with the 0.5μm BCD process.