Effect investigations of double pulse test on the wide bandgap power devices

This paper addresses the investigations of the probe depending effects on the dynamic characteristics for a commercial SiC MOSFET. A double pulse test with a clamped inductive load has been used for the analysis on the switching behaviors of the devices under test (DUT). Then these switching characteristics are investigated under different voltage and current measurements in order to define a standard measurement guideline for the final test setup. In this paper, a 1,2kV SiC MOSFET is evaluated in terms of turn on and turn off voltage and current measurement.