Surge current capability of 6.5kV-rated SiC MOSFETs

This paper presents for the first time an experimental investigation into the surge current capability of 6.5kV-rated SiC MOSFETs. The performance of both MOSFET’s body diode and its channel in the 3
^rd
quadrant operation has been tested. Static measurements confirm that smaller pitches (14μm) provide lower voltage drops than larger ones (21μm). The 10ms half-sine surge measurements reveal that the body diode offers superior performance compared to 3
^rd
quadrant channel operation. A short comparison versus Si technology is also attempted.