4.5kV SiC Charge-Balanced MOSFETs with Ultra-Low On-Resistance

We report successful design and fabrication of 4.5kV SiC charge-balanced MOSFET with R
on,sp
of 10 mΩ.cm
²
at 25 °C (20% below SiC unipolar limit). This device implements a novel scalable drift layer architecture for a high voltage switch as an alternative solution to super-junction devices. We have characterized the CB MOSFETs from room temperature up to 175 °C and show successful double pulse switching at 2.8kV and J
F
=50 A/cm
²
. Total switching loss is 110mJ/cm
²
at 25 °C and drops to 95mJ/cm
²
at 125 °C.