A dVS/dt Noise Immunity Improvement Structure Based on Slope Sensing Technology for 200V High Voltage Gate Drive Circuit

This paper presents a high voltage level shifter with a dVs/dt noise immunity improvement structure. Benefit from the proposed slope sensing technology, the dVs/dt noise can be eliminated without compromising the transmission speed of the level shifter. Meanwhile, a new level shifter featuring with three branches is also proposed to increase the transmission speed. Based on 200V BCD process, measured and simulated results are performed to verify the electrical characteristics of the designed gate drive circuit.