Opportunities and challenges of a 1200 V IGBT for 5 V gate voltage operation

This work presents a novel scaling approach for IGBTs which applies constant electric-field scaling while keeping the short-circuit current density, the on-state charge carrier distribution and the external parasitics unchanged. A state-of-the-art 1200 V MPT (micro-pattern trench) IGBT [1] and a scaled variant operated at 5 V gate supply voltage, obtained by applying the proposed scaling principle, are compared with respect to on-state voltage, switch-off/switch-on tradeoffs and sensitivity to parasitic turn-on.