6.5kV Silicon Carbide MOSFETs with 5kV RB safe operating area and MOS-channel surge capability

This paper reports wide reverse bias safe operating area (RBSOA) and surge current capability in 6.5kV/8A SiC MOSFET power devices. The results indicate robustness of 6.5kV devices tested at $125^{\circ}\mathrm{C}$ under turn-off SOA conditions at V$_{D} =$ 5000V up to four times nominal current density (4x $\mathrm{J}_{\mathrm{NOM}}=160 \mathrm{Acm}^{-2}$). The surge current capability of the MOS-channel has been tested up to 10x J
NOM
, and for pulse duration up to 10ms. The observed voltage waveforms, after applying two current pulses at 320Acm$^{-2}$, show high reproducibility. Minor variations between the two voltage pulses were observed for current values above 400Acm$^{-2}$. Remarkably, the MOSFET devices do not get destroyed while tested at this higher limit.