Investigation of dVDS/dt Controllability on Rg in SWITCH-MOS to Achieve Superior Turn-on Characteristics with Low dVDS/dt

In this study, we investigated dV
DS
/dt controllability on gate resistance (R
g
) in a 1.2 kV SWITCH-MOS. In the case of large R
g
, the SWITCH-MOS showed roughly the same dV
DS
/dt as a conventional SiC trench MOSFET. However, in the case of small R
g
, the SWITCH-MOS achieved higher dV
DS
/dt, suggesting that the SWITCH-MOS could improve the dV
DS
/dt controllability on R
g
. In the SWITCH-MOS, negative dI
D
/dt occurs in the initial phase of the drain-source voltage fall, owing to the fast reverse recovery. Therefore, the SWITCH-MOS has a large gate charging current in the initial phase, resulting in higher dV
DS
/dt with small R
g
. In the case of large $R_{g}$, this negative dI
D
/dt is so small that the SWITCH-MOS shows low dV
DS
/dt. Hence, the SWITCH-MOS demonstrates excellent dV
DS
/dt controllability on R
g
.