An Ultralow Loss N-channel RB-IGBT with P-drift Region

A novel ultralow loss N-channel reverse-blocking (RB) IGBT with the P-drift region is proposed (PD RB-IGBT). In the blocking state, the symmetrical five-layer structure (P+/N-FS/Pdrift/N-CS/P-body) of the PD RB-IGBT enables high bidirectional blocking capabilities for the device. During the turn-off transient, the parasitic SCR structure of the PD RB-IGBT introduces the regenerative feedback mechanism to accelerate the excess carrier extracting speed, thus reducing the turn-off time. In addition, the PD RB-IGBT also optimizes the turn-on performance by suppressing the gate self-charging effect. Simulation results show that, when compared with the BEFE RB-IGBT, the PD RB-IGBT delivers similar blocking capability and on-state voltage drop while reducing turn-off loss by 42%. At a typical reverse recovery dV/dt of 10 kV/μs, the turn-on loss and reverse recovery loss of the PD RB-IGBT could be also reduced by 35%. Another advantage of the PD RB-IGBT lies in its commercial CSTBT-compatible fabrication process, which makes the device a promising candidate for power applications.