Large-Signal Modelling of sub-THz InP Triple-Barrier Resonant Tunneling Diodes

A large-signal equivalent circuit model is developed for ultra-high frequency signal generation and detection provided by an InP triple barrier resonant tunneling diode. On-wafer DC and S-parameter measurements on 0.5 um
²
and 1 um
²
area devices were made from 20 MHz to 67 GHz. The bias dependent measurement data are utilized to extract the parameters of a compact RF model which accurately describes the static and dynamic behavior of the triple barrier resonant tunneling under zero bias and forward bias condition.