A Fast Extraction Method of Energy Distribution of Border Traps in AlGaN/GaN MIS-HEMT

MIS-HEMT is one of the most promising structures to prohibit the unfavorable gate leakage in conventional AlGaN/GaN HEMTs. However, the extra insulator layer introduces massive border traps at insulator/AlGaN interface and results in the poor reliability. In this brief the energy distribution of border traps in AlGaN/GaN MIS-HEMT gate stack is extracted and investigated through a discharging-based trap energy profile technique. The technique adopts spot-Id sense measurement with 1 millisecond measurement time to capture the “whole (both fast and slow)” border traps. The results are beneficial to improve the reliability of AlGaN/GaN MIS-HEMT.