Numerical simulation of single-lithography nanoelectronic complementary bipolar circuits

This paper presents numerical 2D device-circuit simulation of nanoelectronic complementary bipolar field-effect (CBFE) circuits with potential for an ultra-high degree of integration for future ULSI. Minimum-topologic single-lithography symmetrical transistor structures (STS) with undoped or lightly-doped bases in the nanometer regime possessing good switching and amplifying properties provide for sub-0.4 V CBFE circuits in the ultra-low-power regime with high intrinsic speed and acceptable drivability.