Temperature Dependent Defect Modes at Terahertz Regime

Materials exhibiting refractive index significantly depending on temperature can be used as defect layers to obtain temperature-dependent defect modes (narrow transmission peak in forbidden band) in perturbed truncated-periodic multilayers. Here we consider Indium Antimonide (InSb), which in the terahertz frequency range, as the temperature increases, transforms from a lossy dielectric material to a lossy plasmonic material. Despite the dissipative behavior of InSb, high peak defect modes can be excited if the truncated-periodic multilayer is properly designed. As an example, we show that in a Silica/Polymethylpentene (SiO
₂
/TPX) truncated-periodic multilayers perturbed by a InSb layer a defect mode can be excited with a center frequency which can span a significantly large band by varying the temperature.