Numerical Modeling of SiC MOSFET Ageing due to Electrical Stress

Time dependent dielectric breakdown (TDDB) is the leading cause of MOSFET failure. Currently, the only information circuit designers are provided with on this ageing mechanism is the gate voltage rating on the device's data sheet. Creating device-specific models for ageing can allows for more accurate predictions of lifetime during operation in converters and motor drives. This work aims to evaluate the use of numerical modeling for the estimation of SiC MOSFET aging due to electrical stress. Using finite element analysis and experimental verification an effective model for prediction of aeging in SiC MOSFETs have been developed and experimentally verified.