Quantum dot intermediate band solar cell

This paper discusses the possibility of manufacturing the intermediate band solar cell (IBSC), a cell with the potential of achieving 63.2% of efficiency under concentrated sunlight, using quantum dot technology. The 0-dimensionality nature of the dots avoids electron thermalisation between bands enhancing the possibilities for radiative recombination between bands and making possible the existence of three quasi-fermi levels, some of the pivots the theory of the IBSC is sustained on. In this sense, it is suggested that an InGaAs/AlGaAs system could be used for band engineering the optimum bandgaps of the IBSC cell (0.71 and 1.24 eV). Dots should be about 40 /spl Aring/ of radius, spaced in the range of 100 /spl Aring/ and distributed in a three dimensional array. The Stranski and Krastanow method is proposed as a technology for achieving this goal. The possibility of n-doping the dots is also discussed.