SiGe Sub-THz VCOs Design Approach for Imaging Applications

In this work the design method and comparative results of sub-THz tunable voltage sources are reported. Different architectures are considered showing the best performance architectures and more reliable approaches for the realization of voltage-controlled oscillators (VCOs) with integrated technology. The considered scenario is the realization of a signal source for THz camera and imaging applications. The preferred technology adopted in this work has been the 130 nm SiGe heterojunction-bipolar-transistor process provided by IHP foundry. The SG13G2 has a cut-off frequency (f
_T
) of 300 GHz and a maximum oscillation frequency (f
_max
) of 450 GHz. The solutions here proposed achieve high output power levels, very good Phase Noise performance, wide tunability and compact dimensions.