Capacitive Trench-Based Charge Transfer Device

This paper presents a new charge coupled device (CCD) based on capacitive deep trench isolation (CDTI), developed in CMOS technology. The 2 phase device features collection, storage and transfer in the silicon volume. Full Well Charge (FWC) of about 2.6ke-/
$\mu \text{m}^{2}$
and Charge Transfer Inefficiency (CTI) below
$1\times 10^{-4}$
have been measured via electrical charge injection on pixels with pitches ranging from 12 to
$48~\mu \text{m}$
.