Deuterium isotope effect for AC and DC hot-carrier degradation of MOS transistors: a comparison study

Several new phenomena are observed comparing the AC stress with the DC stress. In the initial stress period (<30 s), the deuterium isotope effect is smaller for AC stress than for DC stress, which is ascribed to the hole injection. In the final stress stage (>10/sup 4/ s), the saturation of the G/sub m/ degradation stops and the G/sub m/ degradation starts to increase again for AC stress, which is probably due to the hole trapping.